International Rectifier ( IR ), a global leader in power semiconductors and management solutions, announced the expansion of its portfolio of 40V to 100V automotive MOSFETs , including logic level device families. The new family of MOSFETs is suitable for heavy duty applications on traditional internal combustion engine (ICE) platforms as well as on micro-hybrid and full hybrid platforms.
The optimized new automotive MOSFET family offers on-resistance (RDS(on)) down to 8 mΩ at 55V. In addition, logic-level MOSFET devices simplify gate drive requirements while reducing board space and component count.
Pan Dawei, vice president of sales for IR Asia Pacific, said: "Our expanded automotive MOSFET family, including logic level devices, provides customers with a better choice of voltage, package and functionality to meet their design requirements. IR's proven silicon technology is guaranteed by customers."
The new family of MOSFETs was developed using AU Gen 10.2 trench technology. All IR automotive MOSFET products follow the IR's zero-defect automotive quality concept and have undergone dynamic and static device averaging and 100% automated wafer-level visual inspection. The AEC-Q101 standard requires that the on-resistance variation of the device not exceed 20% after 10,000 temperature cycling tests. However, after extended testing, IR's new AU material has a maximum on-resistance change of only 12% over 5,000 temperature cycles, demonstrating the high strength and durability of this material.
The new device is AEC-Q101 compliant and uses environmentally friendly materials that are both lead free and RoHS compliant.
International Rectifier (IR), a global leader in power semiconductors and management solutions, announced the expansion of its portfolio of 40V to 100V automotive MOSFETs, including logic level device families. The new family of MOSFETs is suitable for heavy duty applications on traditional internal combustion engine (ICE) platforms as well as on micro-hybrid and full hybrid power platforms.
The optimized new automotive MOSFET family offers on-resistance (RDS(on)) down to 8 mΩ at 55V. In addition, logic-level MOSFET devices simplify gate drive requirements while reducing board space and component count.
Pan Dawei, vice president of sales for IR Asia Pacific, said: "Our expanded automotive MOSFET family, including logic level devices, provides customers with a better choice of voltage, package and functionality to meet their design requirements. IR's proven silicon technology is guaranteed by customers."
The new family of MOSFETs was developed using AU Gen 10.2 trench technology. All IR automotive MOSFET products follow the IR's zero-defect automotive quality concept and have undergone dynamic and static device averaging and 100% automated wafer-level visual inspection. The AEC-Q101 standard requires that the on-resistance variation of the device not exceed 20% after 10,000 temperature cycling tests. However, after extended testing, IR's new AU material has a maximum on-resistance change of only 12% over 5,000 temperature cycles, demonstrating the high strength and durability of this material.
The new device is AEC-Q101 compliant and uses environmentally friendly materials that are both lead free and RoHS compliant.
ShenZhen Antenk Electronics Co,Ltd , https://www.antenkcon.com